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TN2404K/TN2404KL/BS107KL
Vishay Siliconix
SPECIFICATIONS (T A = 25 °C, unless otherwise noted)
Max.
Typ.
Parameter
Symbol
Test Conditions
Min.
Limits
a
Unit
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
V DS
V GS(th)
V GS = 0 V, I D = 100 μA
V DS = V GS , I D = 250 μA
240
0.8
257
1.65
2
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 192 V, V GS = 0 V
V DS = 192 V, V GS = 0 V, T J = 55 °C
V DS ?? 10 V, V GS = 10 V
V DS ?? 10 V, V GS = 4.5 V
V GS ?? 10 V, I D = 0.3 A
0.8
0.5
2.2
± 100
1
10
4
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS ?? 4.5 V, I D = 0.2 A
2.3
4
?
V GS ?? 2.5 V, I D = 0.1 A
2.4
6
Forward Transconductance a
g fs
V DS = 10 V, I D = 0.3 A
1.6
S
Diode Forward Voltage
V SD
V GS = 0 V, I S = 0.3 A
0.8
1.2
V
Dynamic b
Total Gate Charge
Q g
4.87
8
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Q gs
Q gd
t d(on)
V DS = 192 V, V GS = 10 V, I D = 0.5 A
0.56
1.53
5
10
nC
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 60 V, R L = 200 ?
I D ? 0.3 A, V GEN = 10 V, R g = 25 ?
12
35
16
20
60
25
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 72225
S12-1767-Rev. C, 23-Jul-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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